![]() The structural difference and chemical incompatibility largely hinder the epitaxial growth of ferroelectric oxides directly on silicon 2. However, it remains challenging to integrate ferroelectric thin films (perovskite ferroelectrics, for example) with desired out-of-plane polarization onto the silicon platform. Ultrathin ferroelectrics are key components in ferroelectric field effect transistors and ferroelectric tunnel junctions, holding great promise for applications in high-density non-volatile memories and logic devices 1. Our study raises the prospect of designing artificial oxide superlattices on silicon with tailored functionalities. Meanwhile, this coherent strain in turn suppresses the magnetism of LaMnO 3 as the thickness of BaTiO 3 increases. Optical second harmonic generation measurements signify a predominant out-of-plane polarized state with strongly enhanced net polarization in the tricolor superlattices, as compared to the BaTiO 3 single film and conventional BaTiO 3/SrTiO 3 superlattice grown on silicon. By harnessing the coherent strain between the constituent layers, we overcome the biaxial thermal tension from silicon and stabilize c-axis oriented BaTiO 3 layers with substantially enhanced tetragonality, as revealed by atomically resolved scanning transmission electron microscopy. Here, we present asymmetric LaMnO 3/BaTiO 3/SrTiO 3 superlattices fabricated on silicon with layer thickness control at the unit-cell level. In order to bring the diverse functionalities of transition metal oxides into modern electronics, it is imperative to integrate oxide films with controllable properties onto the silicon platform.
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